1 publication date: november 2003 skd00073ced variable capacitance diodes MA26V02 silicon epitaxial planar type for vco features ? good linearity and large capacitance-ratio in c d ? v r relation ? small series resistance r d absolute maximum ratings t a = 25 c parameter symbol rating unit reverse voltage v r 6v junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c marking symbol: 2e unit: mm 0.60 0.05 1.00 0.05 2 1 3 0.39 +0.01 ? 0.03 0.25 0.05 0.25 0.05 0.50 0.05 0.65 0.01 0.15 0.05 2 1 0.35 0.01 0.05 0.03 0.05 0.03 3 electrical characteristics t a = 25 c 3c parameter symbol conditions min typ max unit reverse current i r v r = 5 v 10 na diode capacitance c d1v v r = 1 v, f = 1 mhz 18.0 20.0 pf c d4v v r = 4 v, f = 1 mhz 7.3 9.0 capacitance ratio c d1v /c d4v 2.1 2.6 ? series resistance * r d v r = 4 v, f = 470 mhz 0.3 ? note) 1. measuring methods are based on japanese industrial standard jis c 7031 measuring methods for diodes. 2. absolute frequency of input and output is 470 mhz. 3. * : measuring instrument: yhp model 4191a rf impedance analyzer 1: anode 2: n.c. 3: cathode ml3-n2 package
MA26V02 2 skd00073ced i r ? t a i f ? v f c d ? v r c d ? t a 0 100 80 20 60 40 0.984 1.032 1.024 1.016 1.008 1.000 0.992 v r = 1 v 4 v f = 1 mhz ambient temperature t a ( c) c d (t a ) c d (t a = 25 c) 10 ? 2 10 1 10 ? 1 0 80 120 40 v r = 5 v ambient temperature t a ( c) reverse current i r (na) 0 0.2 0.6 0.8 1.0 1.2 0.4 1.4 0 20 40 60 80 100 120 140 160 180 t a = 60 c ? 40 c 25 c forward voltage v f (v) forward current i f (ma) reverse voltage v r (v) diode capacitance c d (pf) 08 26 4 1 10 2 10 f = 1 mhz t a = 25 c
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